![Applied Sciences | Free Full-Text | Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off Applied Sciences | Free Full-Text | Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off](https://www.mdpi.com/applsci/applsci-12-00820/article_deploy/html/images/applsci-12-00820-g004.png)
Applied Sciences | Free Full-Text | Growth and Fabrication of GaAs Thin-Film Solar Cells on a Si Substrate via Hetero Epitaxial Lift-Off
![Research p-Si/n-GaAs heterojunction by using SAB (Background) Si/compound semiconductor heterojunctions are assumed to be one of the key components in realizing functional devices composed of these materials such as tandem cells. Heterojunctions ... Research p-Si/n-GaAs heterojunction by using SAB (Background) Si/compound semiconductor heterojunctions are assumed to be one of the key components in realizing functional devices composed of these materials such as tandem cells. Heterojunctions ...](http://www.shigekawa-ocu.jp/images/apex-6-021801_p-Si_n-GaAs_fig1a1.jpg)
Research p-Si/n-GaAs heterojunction by using SAB (Background) Si/compound semiconductor heterojunctions are assumed to be one of the key components in realizing functional devices composed of these materials such as tandem cells. Heterojunctions ...
![High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed | Scientific Reports High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed | Scientific Reports](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fsrep25328/MediaObjects/41598_2016_Article_BFsrep25328_Fig1_HTML.jpg)
High current density GaAs/Si rectifying heterojunction by defect free Epitaxial Lateral overgrowth on Tunnel Oxide from nano-seed | Scientific Reports
![Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors | Scientific Reports Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors | Scientific Reports](https://media.springernature.com/full/springer-static/image/art%3A10.1038%2Fsrep06964/MediaObjects/41598_2014_Article_BFsrep06964_Fig1_HTML.jpg)
Heterogeneous Integration of Epitaxial Ge on Si using AlAs/GaAs Buffer Architecture: Suitability for Low-power Fin Field-Effect Transistors | Scientific Reports
![Applied Sciences | Free Full-Text | Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode Applied Sciences | Free Full-Text | Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode](https://www.mdpi.com/applsci/applsci-10-00007/article_deploy/html/images/applsci-10-00007-g001.png)
Applied Sciences | Free Full-Text | Multi-Energy Valley Scattering Characteristics for a SI-GaAs-Based Terahertz Photoconductive Antenna in Linear Mode
![High effective terahertz radiation from semi-insulating-GaAs photoconductive antennas with ohmic contact electrodes: Journal of Applied Physics: Vol 110, No 2 High effective terahertz radiation from semi-insulating-GaAs photoconductive antennas with ohmic contact electrodes: Journal of Applied Physics: Vol 110, No 2](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.3611397&id=images/medium/1.3611397.figures.f1.gif)
High effective terahertz radiation from semi-insulating-GaAs photoconductive antennas with ohmic contact electrodes: Journal of Applied Physics: Vol 110, No 2
![Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device<xref rid="cpb_27_6_067204_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067204_fn1"><label>*</label><p>Project supported by the National Natural ... Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device<xref rid="cpb_27_6_067204_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067204_fn1"><label>*</label><p>Project supported by the National Natural ...](http://cpb.iphy.ac.cn/article/2018/1941/cpb_27_6_067204/cpb_27_6_067204_f1.jpg)
Room-temperature large photoinduced magnetoresistance in semi-insulating gallium arsenide-based device<xref rid="cpb_27_6_067204_fn1" ref-type="fn">*</xref><fn id="cpb_27_6_067204_fn1"><label>*</label><p>Project supported by the National Natural ...
![GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding - ScienceDirect GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0927024815002901-gr3.jpg)
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding - ScienceDirect
![GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding - ScienceDirect GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding - ScienceDirect](https://ars.els-cdn.com/content/image/1-s2.0-S0927024815002901-gr5.jpg)
GaAs solar cell on Si substrate with good ohmic GaAs/Si interface by direct wafer bonding - ScienceDirect
![Research p-Si/n-GaAs heterojunction by using SAB (Background) Si/compound semiconductor heterojunctions are assumed to be one of the key components in realizing functional devices composed of these materials such as tandem cells. Heterojunctions ... Research p-Si/n-GaAs heterojunction by using SAB (Background) Si/compound semiconductor heterojunctions are assumed to be one of the key components in realizing functional devices composed of these materials such as tandem cells. Heterojunctions ...](http://www.shigekawa-ocu.jp/images/apex-6-021801_p-Si_n-GaAs_fig1c.jpg)