![Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters | Nature Communications Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters | Nature Communications](https://media.springernature.com/m685/springer-static/image/art%3A10.1038%2Fs41467-020-17563-0/MediaObjects/41467_2020_17563_Fig1_HTML.png)
Exciton-driven change of phonon modes causes strong temperature dependent bandgap shift in nanoclusters | Nature Communications
![The temperature dependence of the band gap energy in silicon: ◊ the pn... | Download Scientific Diagram The temperature dependence of the band gap energy in silicon: ◊ the pn... | Download Scientific Diagram](https://www.researchgate.net/profile/Tariq-Gilani/publication/241884255/figure/fig2/AS:669329544728578@1536592007107/The-temperature-dependence-of-the-band-gap-energy-in-silicon-the-pn-junction-of.png)
The temperature dependence of the band gap energy in silicon: ◊ the pn... | Download Scientific Diagram
![Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration | Scientific Reports Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration | Scientific Reports](https://media.springernature.com/lw685/springer-static/image/art%3A10.1038%2Fsrep36504/MediaObjects/41598_2016_Article_BFsrep36504_Fig6_HTML.jpg)
Engineering of band gap states of amorphous SiZnSnO semiconductor as a function of Si doping concentration | Scientific Reports
![Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence: Journal of Applied Physics: Vol 115, No 4 Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence: Journal of Applied Physics: Vol 115, No 4](https://aip.scitation.org/action/showOpenGraphArticleImage?doi=10.1063/1.4862912&id=images/medium/1.4862912.figures.f8.gif)
Temperature dependence of the band-band absorption coefficient in crystalline silicon from photoluminescence: Journal of Applied Physics: Vol 115, No 4
Why is 1.235V commonly used as a precision voltage reference value? Is it related to a specific semiconductor band gap or is there some other reason? - Quora
![Finite-Temperature Full Random-Phase ApproximationModel of Band Gap Narrowing for Silicon Device | Semantic Scholar Finite-Temperature Full Random-Phase ApproximationModel of Band Gap Narrowing for Silicon Device | Semantic Scholar](https://d3i71xaburhd42.cloudfront.net/8c195aa127ac185eedb4766bae0bf44b58df1839/12-Table2-1.png)
Finite-Temperature Full Random-Phase ApproximationModel of Band Gap Narrowing for Silicon Device | Semantic Scholar
![How is the bandgap reference diode so accurate? (temperature changes bandgap?) - Physics Stack Exchange How is the bandgap reference diode so accurate? (temperature changes bandgap?) - Physics Stack Exchange](https://i.stack.imgur.com/NAxzE.gif)